Film solar cells on cdS/CdTe base with different back contacts icon

Film solar cells on cdS/CdTe base with different back contacts




НазваFilm solar cells on cdS/CdTe base with different back contacts
Дата30.06.2013
Розмір7.4 Kb.
ТипДокументи

УДК 621.472.629.78



FILM SOLAR CELLS ON CdS/CdTe BASE WITH DIFFERENT BACK CONTACTS


G.S. Khrypunov, A.V. Meriyts , N.V. Deyneko, N.A. Kovtun, B.A. Novikov

National Technical University “Kharkov Polytechnic Institute”, khripr@ukr.net

One of the direction development terrestrial photovoltaic is created tandem device structure with back CdTe/CdS SC. Presently for tandem structures was tested a new construction of the CdS/CdTe SC with transparent back film electrode made up indium and tin oxides (ITO). The peculiarities of photo-electric processes in CdS/CdTe SC with transparent back film electrode have been studied. With this purpose we carried out comparative studies of glass/SnOx:F/CdS/CdTe/ITO, glass/SnOx:F/CdS/CdTe/Cu(0,5m)/ITO and glass/SnOx:F/CdS/CdTe/Cu(11m)/Au solar cells.


It was found that the height of the real potential barrier CdTe-Cu/Au is 0.25-0.30 eV, the carriers concentration in the base layers near back contact is 9,51020cm-3. Height of the real potential barrier CdTe-ITO is 2,2 eV, the carriers concentration in the base layers near back contact is 21021cm-3. The measurements of Q(λ) have been made on front side (across glass substrate) of the SC ITO back contact and the behaviour has been compared with the one of the standard Cu/Au back contact . This last one has a very similar response in the red part near the absorption edge, but has a better response in the 400-550 nm region most probably due to the presence of copper in the bulk of CdTe for Cu/Au back contact SC which might passivity the grain boundaries and increase the quantum efficiency. If the CdS/CdTe/ITO system is illuminated from the frontal side (across glass substrate) hand the applied electrical bias is positive, the electrical voltage growth results in reduction of the spectral response.  An increase of the direct bias results in a reduction of the electrical field of the front heterojunction CdS/CdTe and an increase of the electrical field of the back heterojunction ITO/CdTe. At U>0,8V the change of photocurrent polarity from positive to negative is registered. The change of photocurrent polarity is caused by the existence of two heterojunctions (nCdS-pCdTe, p+CdTe-n+ITO) in the device which are in opposite connection.

The SC CdS/CdTe/Cu/Au have efficiency 10,4% with open circuit voltage Uoc= 790 mV, shot current density Jsc= 20,1 mA/cm2, FF= 0,66. By illumination on the front side the efficiency SC CdS/CdTe/ITO was 7,7% with Uoc= 690 mV, Jsc= =18,5 mA/cm2, FF= 0,60. The efficiency SC CdS/CdTe/Cu/ITO was 9,9% with Uoc= 740 mV, Jsc= 19,5 mA/cm2, FF=0,68. By analytical processing light ВАХ is established, that use of thin layers copper in a design of transparent contact results in decrease of reverse current saturation density.

Conclusion

It was shown, that SC with ITO/Cu back contact would have the same high efficiency as well as SC with Cu/Au back contact, the same high stability as well as SC with ITO back contact.

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