Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb icon

Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb




НазваShort-range principle in the theory of electron scattering on the crystal lattice defects in inSb
Дата30.06.2013
Розмір6.8 Kb.
ТипДокументи

УДК: 621.315.592


Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb


O.P. Malyk 1 , G.V. Kenyo 2

1 Lviv Polytechnic National University, Semiconductor Electronics Department,

2 Lviv Polytechnic National University, Information Security Department

omalyk@ukr.net


Usually the charge carrier scattering models in indium antimonide are considered in relaxation time approximation or using the variational principle. However, these models have essential shortcoming: a) they contradict the special relativity according to which the charge carrier would interact only with the neighbouring crystal region; b) they contradict the atomistic hypothesis according to which the charge carrier interacts (and transfers the energy respectively) only with one atom but not simultaneously with many atoms which are situated in different points of space. From the other side in [1,2] the short range models of carrier scattering were proposed for AIIBVI and AIIIBV semiconductors in which the above mentioned shortcomings were absent. The purpose of the present work is to use this approach for description of the electron scattering in InSb.

For the charge carrier scattering on the nonpolar optical and acoustic phonons and static strain potential the interaction radius of the short-range potential is limited by one unit cell. For the charge carrier scattering on the ionized impurity, polar optical and piezoelectric (piezoacoustic and piezooptic) phonons the interaction radius of the short-range potential is founded in a form R= a (a - lattice constant,  – the respective adjusting parameters). The temperature dependence of the electron mobility in the range 8 –700 K in InSb crystal (defect concentration 8.3×1014 cm-3) was calculated. The influence of the different scattering mechanisms on the charge carrier mobility is considered. The scattering parameters  for different scattering modes are determined. The temperature dependences of the thermoelectric power in indium antimonide with different defect concentration in the same temperature range were calculated. A good agreement between theory and experiment in all investigated temperature range is established.


Conclusion

On the base of the short-range principle the electron scattering processes on the various crystal lattice defects in indium antimonide were considered. A good agreement between the theory and experimental data in investigated temperature range was established.


references

1. Malyk O.P. Charge carrier scattering on the short-range potential of the crystal lattice defects in ZnCdTe, ZnHgSe and ZnHgTe / O.P. Malyk // Physica B: Condensed Matter. – 2009. – V. 404. – N. 23–24. – P. 5022–5024.

2. Malyk O.P. Charge carrier mobility in gallium nitride /O.P. Malyk // Diamond Relat. Mater. – 2012. – V.23. – N 3. – P. 23–27.

Схожі:

Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconСписок публікацій працівників кафедри теоретичної фізики (2008-2011 рр.)
О. К. Reity, S. I. Myhalyna. “Adiabatic asymptotic theory of the two-electron exchange at relativistic binding energies” // Науковий...
Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconДокументи
1. /Short course of pathophysiology - Part 1/1, 2, 3, 4 - general pathophysiology.doc
Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconNiweek 2009 Student Design Showcase Submission Form
«Theory of automatic control in aerodynamic», «Mechatronic and Robotics», "Theory of mechanic". The presented object of the system...
Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconProtonic implantation of electrically active defects

Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconRange of services

Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconIons into a copper single crystal (100) and (111)

Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconGamma-irradiation and ion-implantation effects and defects in chalcogenide vitreous semiconductors

Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconWavelet analysis for Mueller matrix images of biological crystal networks

Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconWavelet analysis for Mueller matrix images of biological crystal networks
move to 195-25688
Short-range principle in the theory of electron scattering on the crystal lattice defects in inSb iconVice-Rector for education normal physiology department
К. Anokhin. Reverse afferentation as system-making principle. Laws of conducting of excitation on nervous fibres
Додайте кнопку на своєму сайті:
Документи


База даних захищена авторським правом ©zavantag.com 2000-2013
При копіюванні матеріалу обов'язкове зазначення активного посилання відкритою для індексації.
звернутися до адміністрації
Документи